Thermal annihilation process of stacking-fault tetrahedron defect in Si-film epitaxy

Observation of Stacking Fault Tetrahedral in TWIP Steel

Low stacking fault energy face centered cubic (FCC) materials contain characteristic defect structures. Stacking fault tetrahedral are one of those rare structures that occur under special experimental conditions. For the first time, stacking fault tetrahedral were observed in Fe-30Mn-3Al-3Si twinning induced plasticity (TWIP) steel. Their presence resulted from a quenching heat treatment.

A Consolidation Process Model for Film- Stacking Glass/pps Laminates

The application of thermoplastic polymers as a matrix material in fibre reinforced composites has grown steadily over the last decades [1]. Thermoplastic composites offer clear advantages over their thermoset counterparts in terms of improved fracture toughness, potential for recycling and, most notably, the possibility to reshape the product at higher temperatures [1,2]. The latter allows rapi...

‏‎suppression of coke formation in thermal cracking by coke inhibitors‎‏

‏‎the main purpose of this research was to:1.develop a coking model for thermal cracking of naphtha.2.study coke inhibition methods using different coke inhibitors.developing a coking model in naphtha cracking reactors requires a suitable model of the thermal cracking reactor based on a reliable kinetic model.to obtain reliable results all these models shall be solved simultaneously.for this pu...

Characterization of Oxidation Induced Stacking Fault in SiGe/Si Seed Stack

Stacking fault formation during epitaxial SiGe layer growth in bipolar complementary metal oxide semiconductor (BiCMOS) process which caused high yield loss due to its leakage current on bipolar transistors has been studied. Through the analysis of process flow, oxidation induced stacking faults were indicated as a possible root cause of the yield loss. The identification of the oxidation induc...

Correlation between Si doping and stacking fault related luminescence in homoepitaxial m-plane GaN